IRGR4045DPbF
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V IC 6.
0A, TC = 100°C
Features
Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant
G E
Tjmax = 175°C
n-channel
C
VCE(on) typ.
1.
7V
E
Benefits
High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses Rugged Transient Performance for Increased...