BV32
NPN Silicon Epitaxial Planar
Transistor
High voltage fast switching power
transistor
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current (tp 5 ms) Base Current Base Peak Current Total Dissipation Operating Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg
TO-92 Plastic Package Weight approx.
0.
19g
Value 700 400 9 1.
5 3 0.
75 1.
5 1.
1 150 - 65 to + 150
Unit V V V A A A A W
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at VCE = 2 V, IC = 0.
5 A at VCE = 2 V, IC = 1 A Collector Cutoff Current at VCB = 700 V Emitter ...