INCHANGE Semiconductor
isc RF Product Specification
isc Silicon
NPN RF
Transistor
2SC2954
DESCRIPTION ·Low Noise and High Gain NF = 2.
3 dB TYP.
; ︱S21e︱2 = 20 dB TYP.
@ f = 200 MHz NF = 2.
4 dB TYP.
; ︱S21e︱2 = 12.
5 dB TYP.
@ f = 500 MHz
APPLICATIONS ·Designed for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
35
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
3.
0
V
IC
Collector Current-Continuous
0.
15
A
PC
Collector Power Dissipation @TC=25℃
2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
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