SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
KHB1D0N60D/I
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
A C D
I J
B
FEATURES
VDSS= 600V, ID= 1.
0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ.
) = 5.
9nC
K Q E H P F F L M O
DIM MILLIMETERS _ 0.
2 6.
6 + A _ 0.
2 6.
1 + B _ 0.
3 5.
34 + C _ 0.
2 0.
7 + D _ 0.
2 2.
7 + E _ 0.
2 2.
3 + F 0.
96 MAX H _ 0.
1 2.
3 + I _ 0.
1 0.
5 + J 1.
5 K _ 0.
1 0.
5 + L _ 0.
1 M 0.
8 + O 0.
55 MIN _ 0.
2 P 1.
02 + _ 0.
2 Q 0.
8 +
1
2
3
...