2SD1223
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process) (Darlington)
2SD1223
Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications
• • • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 3 A) Complementary to 2SB908.
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 80 5 4 0.
4 1.
0 15 150 −55 to 150 Unit V V V A A
JEDE...