Part Number
|
P11N50Z |
Manufacturer
|
ON Semiconductor |
Description
|
NDP11N50Z |
Published
|
Apr 22, 2014 |
Detailed Description
|
NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.52 W
Features
• • • •
Low ON Resistance Low Gate Charge 100% Aval...
|
Datasheet
|
P11N50Z
|
Overview
NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.
52 W
Features
• • • •
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant
VDSS 500 V Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 10.
5 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.
3 sec.
, R.
H.
≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VG...
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