PD - 96424
IRGS4064DPbF
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• • • • • • • • • • Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA 100% of The Parts Tested for (ILM) Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package
G E C
VCES = 600V IC = 10A, TC = 100°C
tsc 5µs, Tjmax = 175°C
n-channel
C
VCE(on) typ.
= 1.
6V
Benefits
• High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for...