PD - 97355B
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package
C
IRGS4062DPbF IRGSL4062DPbF
VCES = 600V IC = 24A, TC = 100°C
G E
tSC ≥ 5µs, TJ(max) = 175°C
n-channel
C
VCE(on) typ.
= 1.
65V
C
Benefits
• High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switc...