PROCESS
Small Signal MOSFET
Transistor
N-Channel Enhancement-Mode
Transistor Chip
CP379X
PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 31.
5 x 31.
5 MILS 5.
5 MILS 3.
9 x 3.
9 MILS 19.
3 x 21.
3 MILS Al-Si - 35,000Å Ti/Ni/Ag - 2,000Å/3,000Å/20,000Å
GEOMETRY GROSS DIE PER 6 INCH WAFER 24,000 PRINCIPAL DEVICE TYPE CMPDM7002AHC
R0 (20-September 2010)
w w w.
c e n t r a l s e m i .
c o m
http://www.
Datasheet4U.
com
PROCESS
CP379X
Typical Electrical Characteristics
R0 (20-September 2010)
w w w.
c e n t r a l s e m i .
c o m
http://www.
Datasheet4U.
com
...