PROCESS
Small Signal
Transistor
CP788X
PNP - Low Noise Amplifier
Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 91,469 PRINCIPAL DEVICE TYPE CMKT5087 EPITAXIAL PLANAR 13.
7 x 13.
7 MILS 5.
9 MILS 4.
0 x 4.
0 MILS 5.
5 x 5.
5 MILS Al-Si - 30,000Å Au - 12,000Å
BACKSIDE COLLECTOR
R0
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PROCESS
CP788X
Typical Electrical Characteristics
R1 (29-April 2010)
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