CPD109R

PROCESS CPD109R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 8.3 x 8.3 MILS 3.9 MILS 5.4 x 5.4 MILS Al - 20,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 251,364 PRINCIPAL DEVICE TYPE CFSH01-30L R0 (13-April 2011) w w w. c e n t r a l s e m i ...