PROCESS CPD30V Dual Switching Diode Dual, Common Cathode, High Speed Switching Diode Chip PROCESS DETAILS Die Size Die Thickness Anode 1 Bonding Pad Area Anode 2 Bonding Pad Area Top Side Metalization Back Side Metalization 15.
4 x 15.
4 MILS 7.
1 MILS 5.
9 x 5.
9 x 8.
3 MILS 5.
9 x 5.
9 x 8.
3 MILS Al - 30,000Å Au-As - 10,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 46,200 PRINCIPAL DEVICE TYPE CMLD2838 BACKSIDE COMMON CATHODE R0 R2 (6-October 2011) w w w.
c e n t r a l s e m i .
c o m http://www.
Datasheet4U.
com PROCESS CPD30V Typical Electrical Characteristics R2 (6-October 2011) w w w.
c e n t r a l s e m i .
c o m http://www.
Datasheet4U.
com ...

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