PROCESS
Schottky Rectifier
CPD79
2 Amp
Schottky Rectifier Chip
PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 49 x 49 MILS 9.
8 MILS 39 x 39 MILS Al/Ni/Au - 30,000Å/3,000Å/1,500Å Ti/Ni/Au - 1,600Å/5,500Å/1,600Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 4,608 PRINCIPAL DEVICE TYPE CTLSH2-40M832
R0 (19-July 2010)
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PROCESS
CPD79
Typical Electrical Characteristics
R0 (19-July 2010)
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