PROCESS
CPD92X
Schottky Diode
High Voltage
Schottky Diode Chip
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 9.
0 x 9.
0 MILS 5.
9 MILS 4.
8 MILS DIAMETER Al - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 209,532 PRINCIPAL DEVICE TYPES CMDD6263 CMKD6263 CMLD6263 Series CMOD6263 CMPD6263 SERIES CMSD6263 SERIES CMUD6263 Series 1N6263
BACKSIDE CATHODE
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PROCESS
CPD92X
Typical Electrical Characteristics
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