2SC3279
NPN Silicon Epitaxial Planar
Transistor
for storobo flash and medium power amplifier applications.
The
transistor is subdivided into four groups L, M, N and P, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
1.
Emitter 2.
Collector 3.
Base TO-92 Plastic Package Weight approx.
0.
19g
Absolute Maximum Ratings (Ta=25oC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Pulsed(Note 1) Collector Current DC Base Current Power Dissipation Junction Temperature Storage Temperature Range Note 1: Pulse Width=10ms (Max.
), Duty Cycle=30%(Max.
) Symbol VCBO VCES VCEO VEBO ICP IC IB Ptot Tj ...