TK18A50D
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK18A50D
Switching
Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 0.
22 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 8.
5 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 18 72 50 533 18 5.
0 150 −55 to 150 Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source
Drain power dissipation (Tc = 25°C) Single puls...