40 V, 26 A, 6.
9 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI04076 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 26 A  RDS(ON) ----------8.
9 mΩ max.
(VGS = 10 V, ID = 23.
3 A)  Qg------- 7.
9 nC (VGS = 4.
5 V, VDS = 20 V, ID = 29.
6 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.
5 V Gate Drive  100 % UIL Tested  RoHS Compliant Applications  DC-DC converters  Synchronous Rectification  Power Supplies Package DFN 5 × 6 8pin DDDD 8pin DDDD SSSG 1pin GSSS 1pin Not to scale Equivalent circuit D(5)(6)(7)(8) G(4) Absolute Maximum Ratings  Unless otherwise speci...

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