SCT2120AF N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.
) ID PD 650V 120m 29A 165W Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Application ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives Outline TO220AB Inner circuit (1) (2) (3) (2) (1) Gate (2) Drain *1 (3) Source (1) *1 Body Diode (3) Packaging specifications Packing Tube Reel size (mm) - Tape width (mm) Type Basic ordering unit (pcs) 50 Packing code C Marking SCT2120AF Absolute maximum ratings (Ta = 25C) Parameter Drain - Source voltag...

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