SCTMU001F N-channel SiC power MOSFET Outline Datasheet VDSS RDS(on) (Typ.
) ID PD Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 400V 120m 20A 132W TO220AB Inner circuit (2) *1 (1) (1) Gate (2) Drain (3) Source *1 Body Diode (3) 6) Pb-free lead plating ; RoHS compliant Packaging specifications Packing Tube 50 SCTMU001F Application ・Audio Type Reel size (mm) Tape width (mm) Basic ordering unit (pcs) Taping code Marking Absolute maximum ratings (Ta = 25C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation (Tc = 25C) Junction temperature...

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