N-Channel MOS FET SKP202 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed March.
2007 ■Package---TO-263 ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1) S (3) ■Absolute maximum ratings (Ta=25°C） Parameter Sy Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Channel Temperature Storage Temperature mbol VDSS 20 VGSS ±3 ID ± ID(pulse) *1 ±1 PD 95 EAS *2 20 IAS Tch 15 Tstg Rating 0 0 45A 80A (Tc=25°C) 0 45 0 －55 to 150 Unit V V A A W mJ A °C °C *1 PW≤100μs，duty cycle≤１% *2 V DD=20V, L=180μH，ILp=...

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