SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.
69 Qg(typ.
)= 29.
5nC @VGS=10V
D N N A
KF10N60P/F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
KF10N60P
O C F E G B Q I K M L J H P
DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E F G H I J K L M N
15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 0.
2 4.
...