Dual Trench MOS Barrier Schottky Rectifier
V6WL45C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.34 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation K Dual Trench MOS Barrier Schottky Rectifier TMBS® TO-252 (D-PAK) • Meets MSL level 1 , per J-STD- 020, LF maximum peak of ...
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