Part Number
|
IRF650A |
Manufacturer
|
Fairchild |
Description
|
Advanced Power MOSFET |
Published
|
May 12, 2014 |
Detailed Description
|
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
|
Datasheet
|
IRF650A
|
Overview
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.
) @ VDS = 200V Low RDS(ON) : 0.
071 Ω (Typ.
)
1 2 3
IRF650A
BVDSS = 200 V RDS(on) = 0.
085 Ω ID = 28 A
TO-220
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T...
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