Part Number
|
IXTH440N055T2 |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
May 13, 2014 |
Detailed Description
|
Advance Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
...
|
Datasheet
|
IXTH440N055T2
|
Overview
Advance Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTH440N055T2 IXTT440N055T2
VDSS ID25
RDS(on)
= 55V = 440A ≤ 1.
8mΩ
TO-247 (IXTH)
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 55 55 ± 20 ± 30 440 160 1200 200 1.
5 1000 -55 .
.
.
+175 175 -55 .
.
.
+175 W °C °C °C °C °C Nm/lb.
in.
g g A A J V V V A A V
G
D
S
D (Tab)
TO-268 (IXTT) G S
D (Tab)
G = Gate S = Source
...
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