SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES .
357 .
362 .
100 OD-50W GLASS .
012 HIGH MAX ANODE (CASE) .
157 .
169 .
018 • • • • • Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .
030 x .
030 inches .
031 .
025 .
500 CATHODE .
040 45° All surfaces are gold plated.
Dimensions are nominal values in inches unless otherwise specified.
Two cathode pins must be externally connected together.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)