Part Number
|
IXTA1R4N100P |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
May 20, 2014 |
Detailed Description
|
PolarTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P
VDSS ID25
RDS...
|
Datasheet
|
IXTA1R4N100P
|
Overview
PolarTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P
VDSS ID25
RDS(on)
= 1000V = 1.
4A ≤ 11.
8Ω
TO-252 (IXTY)
G
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1000 1000 ±20 ±30 1.
4 3.
0 1.
4 100 10 63 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ V/ns W °C °C °C °C °C N/lb.
Nm/lb.
in.
g g g Features
z z z z z
S D (Tab)
TO-263 AA (IXTA)
G S D (Tab)
TO-220AB (IXTP)
G
DS
D (Tab)
1.
6mm...
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