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Part Number
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IXTK600N04T2 |
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Manufacturer
|
IXYS |
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Description
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Power MOSFET |
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Published
|
May 20, 2014 |
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Detailed Description
|
Advance Technical Information
TrenchT2TM GigaMOS TM Power MOSFET
IXTK600N04T2 IXTX600N04T2
VDSS ID25
= =
RDS(on) ≤
...
|
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Datasheet
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IXTK600N04T2
|
Overview
Advance Technical Information
TrenchT2TM GigaMOS TM Power MOSFET
IXTK600N04T2 IXTX600N04T2
VDSS ID25
= =
RDS(on) ≤
40V 600A 1.
5mΩ
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-264 (IXTK)
Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 40 40 ± 20 600 160 1600 200 3 1250 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V A A A A J W °C °C °C °C °C Nm/lb.
in.
N/lb.
g g
G D S Tab
PLUS247 (IXTX)
G
D
S
Tab
G = Gate S = Source
D =...
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