PRELIMINARY
CGHV27200
200 W, 2500-2700 MHz, GaN HEMT for LTE
Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.
52.
7 GHz LTE and BWA amplifier applications.
The
transistor is supplied in a ceramic/metal flange package.
Package Type : 440162 an d 440161 PN: CGHV27 200F and C GHV27200P
Typical Performance Over 2.
5 - 2.
7 GHz
Parameter Gain @ 47 dBm ACLR @ 47 dBm Drain Efficiency @ 47 dBm 2.
5 GHz 15.
0 -36.
5 29.
0
(TC = 25˚C)
2.
6 GHz 16.
0 -37.
5 28.
5
of Demonstration Amplifier
2.
7 GHz 16.
0 -37.
0 29.
0 Units dB dBc %
Note: Measured ...