MJE243G (
NPN), MJE253G (
PNP)
Complementary Silicon Power Plastic
Transistors
These devices are designed for low power audio amplifier and low−current, high−speed switching applications.
Features
• High Collector−Emitter Sustaining Voltage • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current Gain Bandwidth Product • Annular Construction for Low Leakages • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation
@ TC = 25_C Derate above 25_C
VCEO VCB VEB IC ICM IB ...