CYStech Electronics Corp.
ESD protected N-Channel Enhancement Mode MOSFET Spec.
No.
: C800C3 Issued Date : 2011.
01.
19 Revised Date : Page No.
: 1/8 MTNK5C3 Description BVDSS ID RDSON(MAX) 30V 100mA 8Ω • Low voltage drive(2.
5V drive) makes this device ideal for portable equipment.
• High speed switching • ESD protected device • Pb-free lead plating & halogen-free package Symbol MTNK5C3 Outline SOT-523 D G G：Gate S：Source D：Drain G S S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Continuous Pulsed Continuous Pulsed Symbol BVDSS VGS ID IDP IDR IDRP PD Tj ; Tstg Rth,ja Total Power Dissipation ESD susceptibi...

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