|
Part Number
|
MTP2317N3 |
|
Manufacturer
|
CYStech Electronics |
|
Description
|
20V P-CHANNEL Enhancement Mode MOSFET |
|
Published
|
May 25, 2014 |
|
Detailed Description
|
CYStech Electronics Corp.
20V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Dat...
|
|
Datasheet
|
MTP2317N3
|
Overview
CYStech Electronics Corp.
20V P-CHANNEL Enhancement Mode MOSFET
Spec.
No.
: C566N3 Issued Date : 2012.
04.
12 Revised Date : 2014.
01.
14 Page No.
: 1/9
MTP2317N3
Features
• Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package • Pb-free lead plating and halogen-free package
BVDSS ID RDSON@VGS=-4.
5V, ID=-4.
5A RDSON@VGS=-2.
5V, ID=-2.
5A RDSON@VGS=-1.
8V, ID=-2A
-20V -5.
8A 28mΩ(typ.
) 35mΩ(typ.
) 51mΩ(typ.
)
Equivalent Circuit
MTP2317N3
Outline
SOT-23 D
G G：Gate S：Source D：Drain
S
Ordering Information
Device MTP2317N3-0-T1-G Package SOT-23 (Pb-free lead plating and halog...
Similar Datasheet