256K (32K x 8) Paged Parallel EEPROM
Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer • Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum – 1 to 64-byte Page Write Operation • Low Power Dissipation – 50 mA Active Current – 200 µA CMOS Standby Current • Hardware and Software Da...
ATMEL Corporation