CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
Spec.
No.
: C223S6-A Issued Date : 2007.
07.
18 Revised Date :2011.
02.
22 Page No.
: 1/6
HBN2515S6R
(Dual
Transistors) Features
• Two BTD2515 chips in a SOT-363 package.
• Mounting possible with SOT-323 automatic mounting machines.
•
Transistor elements are independent, eliminating interference.
• Mounting cost and area can be cut in half.
• Low VCE(sat), VCE(sat)=25mV (max), at IC / IB = 10mA / 0.
5mA.
• Weight : 9.
1mg, approximately.
• Pb-free package.
Equivalent Circuit
HBN2515S6R
Outline
SOT-363
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base...