Transistors
2SB1321A
Silicon
PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD1992A I Features
• Large collector power dissipation P C (600 mW) • Allowing supply with the radial taping
6.
9±0.
1
0.
15
0.
7
4.
0
1.
05 2.
5±0.
1 ±0.
05 (1.
45) 0.
8
0.
65 max.
1.
0
0.
45−0.
05
+0.
1
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −60 −50 −7 −1 −500 600 150 −55 to +150 Unit V V V A mA mW °C °C
1
2
3
0.
45−0.
05
2.
5±0.
5
2.
5±0.
5
+0.
1
...