IPI60R165CP
CoolMOS® Power
Transistor
Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V
0.
165 Ω 39 nC
PG-TO262
CoolMOS CP is designed for: • Hard switching topologies for Server and Telecom
Type IPI60R165CP
Package PG-TO262
Marking 6R165P
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Av...