2SA1680
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1680
Power Amplifier Applications Power Switching Applications
Unit: mm
• • • •
Low collector-emitter saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) High collector power dissipation: PC = 900 mW (Ta = 25 °C) High-speed switching: tstg = 300 ns (typ.
) Complementary to 2SC4408.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range ymbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −60 −50 −6 −2 −0.
2 900 150 −55 to 150 Unit V V V A A mW °C °C
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