| Part Number | TK8A55DA |
| Manufacturer | Toshiba |
| Title | Silicon N-Channel MOSFET |
| Description | TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A55DA Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit:... |
| Features |
TOSHIBA
⎯ SC-67 2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions ...
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| File Size | 292.64KB |
| Datasheet |
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TK8A55DA : iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK8A55DA，ITK8A55DA ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.9Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 550 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7.5 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARA.