Product specification
WNM4006
Single N-Channel, 45V, 1.
7A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.
126@ VGS=10V 45 0.
142@ VGS=4.
5V 0.
147@ VGS=4.
0V 0.
208@ VGS=2.
5V
SOT-23
D 3
Descriptions
The WNM4006 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM4006 is Pb-free.
1 G
2 S
Pin configuration (Top view)
Features
z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 W46 * = Device Code =...