BUL1102E
High voltage fast-switching
NPN power
transistor
Features
■ ■
High voltage capability Very high switching speed
TAB
Applications
Four lamp electronic ballast for:
3
3 1 2
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120 V mains in push-pull configuration 277 V mains in half bridge current feed configuration TO-220
1
2
TO-220FP
Description
This is a high voltage fast switching
NPN power
transistor manufactured in multi epitaxial planar technology.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the
transistor to withstand a high collector current level ...