Part Number
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TM2314FN |
Manufacturer
|
TECH MOS |
Description
|
N-Channel High Density Trench MOSFET |
Published
|
Jul 3, 2014 |
Detailed Description
|
TECH MOS Technology. N-Channel High Density Trench MOSFET
TM2314FN
PRODUCT SUMMARY
VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V...
|
Datasheet
|
TM2314FN
|
Overview
TECH MOS Technology.
N-Channel High Density Trench MOSFET
TM2314FN
PRODUCT SUMMARY
VDSS ID 5.
4 20V 4.
3 46 @ VGS = 2.
5V RDS(on) (m-ohm) Max 30 @ VGS = 4.
5V
FEATURES
●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package.
D
SOT-23-3L
D S G S G
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation
a a a
Symbol
VDS VGS ID IDM IS PD TJ,TSTG
Limit
20 ± 12 5.
4 21.
5 1.
7 1.
25 0.
75 - 55 to 150
Unit
V V A A A W °C
TA=25°C TA=75°C
Operating Junction and Storage Temperature Range
THERMA...
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