ET830
5 Amps,500Volts N-Channel MOSFET
■ Description
The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching
regulators, switching converters, solenoid, motor drivers, relay drivers.
■ Features
RDS(ON) = 1.
5Ω@VGS = 10 V
Low gate charge ( typical 20nC)
Fast switching capability Avalanche energy specified
Improved dv/dt capability
■ Symbol
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Drain Current Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation Junction Temperature Storage Temp...