INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
2SD649
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability
APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
C com
I
Collector Current- Continuous
w w
s c s i .
w
1500 1500 5 3 5 35
V
V
n c .
i m e
V
A
ICP
Collector Current-Pulse
A
PC
Collector Power Dissipation @ TC≤90℃
W
TJ
Junction Temperature
130
℃
Tstg
Storage Temperature Range
-65~130
℃
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