Part Number
|
TSM10N80 |
Manufacturer
|
Taiwan Semiconductor |
Description
|
800V N-Channel Power MOSFET |
Published
|
Jul 10, 2014 |
Detailed Description
|
TSM10N80
800V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V) ...
|
Datasheet
|
TSM10N80
|
Overview
TSM10N80
800V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1.
Gate 2.
Drain 3.
Source
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
800 1.
05 @ VGS =10V
ID (A)
9.
5
General Description
The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Features
● ● ● Low RDS(ON) 1.
05Ω (Max.
) Low gate charge typical @ 53nC ...
Similar Datasheet