Part Number
|
TSM1NB60S |
Manufacturer
|
Taiwan Semiconductor |
Description
|
600V N-Channel Power MOSFET |
Published
|
Jul 10, 2014 |
Detailed Description
|
TSM1NB60S
600V N-Channel Power MOSFET
TO-92
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
600
RDS...
|
Datasheet
|
TSM1NB60S
|
Overview
TSM1NB60S
600V N-Channel Power MOSFET
TO-92
Pin Definition: 1.
Gate 2.
Drain 3.
Source
PRODUCT SUMMARY VDS (V)
600
RDS(on)(Ω)
10 @ VGS =10V
ID (A)
0.
25
General Description
The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
● ● ● Low RDS(ON) 8Ω (Typ.
) Low gate charge typical @ 6.
1nC (Typ.
) Low Crss typical @ 4.
2pF (Typ.
)
Block Diagram
Ordering Information
Part No.
TSM1NB60SCT B0 TSM1NB60SCT B0G TSM1NB60SCT A3
Package
TO-92 TO-92 TO-92
Packing
1Kpcs / B...
Similar Datasheet