FSP8N60/FS8N60 600V N-Channel MOSFET Features ■ 7.
5A,600v,RDS(on)=1.
0Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings Symbol VDSS ID Drain to Source Voltage Continuous Drain Current(@TC = 25°C...

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