N-Channel Enhancement Mode Field Effect
Transistor FEATURES
60V, 87A, RDS(ON) = 12mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
CEP75N06/CEB75N06
D
D
G
G D S
S CEB SERIES TO-263(DD-PAK)
G
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current
d
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 60
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