Part Number
|
FLM3135-4F |
Manufacturer
|
SUMITOMO |
Description
|
C-Band Internally Matched FET |
Published
|
Jul 14, 2014 |
Detailed Description
|
FLM3135-4F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB = 12.0dB ...
|
Datasheet
|
FLM3135-4F
|
Overview
FLM3135-4F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 36.
5dBm (Typ.
) • High Gain: G1dB = 12.
0dB (Typ.
) • High PAE: ηadd = 38% (Typ.
) • Low IM3 = -45dBc@Po = 25.
5dBm • Broad Band: 3.
1 to 3.
5GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM3135-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.
C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation ...
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