FLM8596-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.
0dBm (Typ.
) High Gain: G1dB = 7.
5dB (Typ.
) High PAE: ηadd = 29% (Typ.
) Low IM3 = -45dBc@Po = 29.
5dBm Broad Band: 8.
5 ~ 9.
6GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM8596-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Tempe...

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