2SK2570 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G1019-0200 (Previous: ADE-208-574) Rev.
2.
00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.
8 Ω typ.
(VGS = 4 V, ID = 100 mA) • 2.
5 V gate drive devices.
• Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 2 G 1.
Source 2.
Gate 3.
Drain S Note: Marking is “ZL–” Rev.
2.
00 Sep 07, 2005 page 1 of 6 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID ID(pulse)*1 Pch Tch Tstg Ratings...

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