SPN8205W 6Common-Drain Dual N-Channel
Enhancement Mode MOSFET
DESCRIPTION The SPN8205W is the Common-Drain Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES 20V/5.
0A,RDS(ON)=24mΩ@VGS=4.
5V 20V/3.
0A,RDS(ON)=34mΩ@VGS=2.
5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TSSOP–8 packa...